EPC Expands 100V GaN Power Stage Line for Motor Drives

Efficient Power Conversion (EPC) has introduced two new 100 V integrated gallium nitride (GaN) power stages, the EPC23103 and EPC23104. These components are designed specifically for high-performance motor drive applications such as robotics and e-mobility. By combining GaN FETs with an integrated gate driver, the company aims to reduce the physical footprint of power systems while increasing overall efficiency. This expansion addresses the growing demand for compact, high-power density solutions in the industrial and consumer electronics sectors as manufacturers look to replace aging silicon technology.

Technical Specifications and Integration Benefits

The new power stages integrate a half-bridge power circuit with an internal gate driver and level shifter to improve signal integrity. This level of integration eliminates the need for several external components, which reduces the total bill of materials for engineering teams. The EPC23103 supports a continuous current of 25 A, while the EPC23104 handles up to 15 A for lower power requirements. Both devices operate at frequencies up to 3 MHz, allowing for the use of smaller filters and passive components in the final assembly.

Efficient Power Conversion designed these units to operate with a wide input voltage range to accommodate various battery configurations. This flexibility allows them to function effectively in 48 V and 80 V systems common in light electric vehicles and industrial drones. Thermal management is improved through a thermally enhanced QFN package that measures only 3.5 mm by 5 mm. The small size enables designers to place the power stage closer to the motor, which significantly reduces parasitic inductance and electromagnetic interference.

The integration also addresses the technical challenges of driving GaN transistors at very high speeds. Because the gate driver is matched to the specific characteristics of the FETs, the system avoids the timing issues often associated with discrete components. This precision results in lower dead-time requirements and higher efficiency across the entire load range. Engineers can now achieve performance levels that were previously unattainable with standard silicon MOSFET configurations in the same power class.

"The integration of the gate driver with the GaN FETs in a single package eliminates the impact of common-source inductance and simplifies the layout. This allows for cleaner switching waveforms and higher efficiency in motor drive systems compared to traditional discrete implementations."

— Alex Lidow, CEO at Efficient Power Conversion

Market Applications and Performance Gains

The shift toward GaN technology in motor drives is driven by the global need for higher precision and reduced equipment weight. In drone applications, the increased efficiency of these power stages extends battery life and flight times for commercial delivery services. For robotic systems, the high switching frequency results in smoother torque delivery and reduced acoustic noise during operation. These performance gains are difficult to achieve with silicon MOSFETs due to their higher switching losses and slower response times.

System protection is another focus of the updated product line to ensure long-term reliability for industrial customers. The integrated circuits include under-voltage lockout and over-temperature protection to ensure stability in harsh industrial environments. These features prevent damage during unexpected fault conditions, which is vital for expensive robotic arms and automated factory machinery. By incorporating these safeguards directly into the chip, EPC reduces the complexity of external monitoring circuits and improves system safety.

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